PHE13009
RoHS

PHE13009

PHE13009

WeEn Semiconductors

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PHE13009

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Specification
Collector Cut-Off Current (Icbo)1mA
Collector-Emitter Breakdown Voltage (Vceo)400V
Power Dissipation (Pd)80W
Collector Current (Ic)12A
DC Current Gain (hFE@Ic,Vce)8@5A,5V
Transition Frequency (fT)-
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)320mV@5A,1A
Transistor TypeNPN
Operating Temperature+150u2103@(Tj)