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Specification
Collector-Emitter Breakdown Voltage (Vceo)25V
Power Dissipation (Pd)350mW
Collector Current (Ic)1.5A
DC Current Gain (hFE@Ic,Vce)160@100mA,1V
Transition Frequency (fT)100MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)500mV@800mA,80mA
Transistor TypeNPN
Operating Temperature+150u2103@(Tj)