Availability:
13680
pieces
Specification
PackageBulk
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)150mA (Ta)
Current-ContinuousDrain(Id)@25°C1.5V, 4V
DriveVoltage(MaxRdsOn3.7Ohm @ 80mA, 4V
MinRdsOn)-
RdsOn(Max)@Id±10V
Vgs-
Vgs(th)(Max)@Id150mW (Ta)
Vgs(Max)150°C (TJ)
InputCapacitance(Ciss)(Max)@VdsSurface Mount
FETFeature4-ECSP1008
PowerDissipation(Max)4-UFDFN
OperatingTemperature30 V
MountingType1.58 nC @ 10 V
SupplierDevicePackage7000 pF @ 10 V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
