Availability:
10770
Pricing
| Quantity | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 42.8176 | |
| 10 | 41.9612 | |
| 100 | 40.6767 | |
| 1000 | 39.3922 | |
| 10000 | 37.6795 |
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C55A (Tc)
DriveVoltage(MaxRdsOn18V
MinRdsOn)52mOhm @ 20A, 18V
RdsOn(Max)@Id5.6V @ 10mA
Vgs107 nC @ 18 V
Vgs(th)(Max)@Id+22V, -4V
Vgs(Max)1337 pF @ 800 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature262W (Tc)
PowerDissipation(Max)175°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-247N
SupplierDevicePackageTO-247-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
