Availability:
10770
pieces
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C55A (Tc)
DriveVoltage(MaxRdsOn18V
MinRdsOn)52mOhm @ 20A, 18V
RdsOn(Max)@Id5.6V @ 10mA
Vgs107 nC @ 18 V
Vgs(th)(Max)@Id+22V, -4V
Vgs(Max)1337 pF @ 800 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature262W (Tc)
PowerDissipation(Max)175°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-247N
SupplierDevicePackageTO-247-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
