Availability:
15688
pieces
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss)1700 V
Current-ContinuousDrain(Id)@25°C3.7A (Tc)
DriveVoltage(MaxRdsOn18V
MinRdsOn)1.5Ohm @ 1.1A, 18V
RdsOn(Max)@Id4V @ 900µA
Vgs14 nC @ 18 V
Vgs(th)(Max)@Id+22V, -6V
Vgs(Max)184 pF @ 800 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature35W (Tc)
PowerDissipation(Max)175°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-3PFM
SupplierDevicePackageTO-3PFM, SC-93-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
