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Specification
Collector-Emitter Breakdown Voltage (Vceo)65V
Power Dissipation (Pd)225mW
Collector Current (Ic)100mA
DC Current Gain (hFE@Ic,Vce)200@2mA,5V;220@2mA,5V
Transition Frequency (fT)100MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)600mV@100mA,5mA;650mV@100mA,5mA
Transistor Type1u4e2aNPN,1u4e2aPNP
Operating Temperature-55u2103~+150u2103@(Tj)