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Specification
Collector-Emitter Breakdown Voltage (Vceo)100V
Power Dissipation (Pd)250mW
Collector Current (Ic)1A
DC Current Gain (hFE@Ic,Vce)100@250mA,10V
Transition Frequency (fT)150MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)600mV@1A,100mA
Transistor TypeNPN
Operating Temperature+150u2103@(Tj)