1N4448
RoHS

1N4448

1N4448

Microsemi

DIODE GEN PURP 75V 200MA DO35

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1N4448

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Specification
Voltage - Forward (Vf) (Max) @ If1V @ 100mA
Voltage - DC Reverse (Vr) (Max)75V
Supplier Device PackageDO-35
SpeedSmall Signal =< 200mA (Io), Any Speed
Series-
Reverse Recovery Time (trr)4ns
PackagingBulk
Package / CaseDO-204AH, DO-35, Axial
Other Names1N4448MS
Operating Temperature - Junction-65°C ~ 150°C
Mounting TypeThrough Hole
Moisture Sensitivity Level (MSL)1 (Unlimited)
Lead Free Status / RoHS StatusContains lead / RoHS non-compliant
Diode TypeStandard
Detailed DescriptionDiode Standard 75V 200mA Through Hole DO-35
Current - Reverse Leakage @ Vr25nA @ 20V
Current - Average Rectified (Io)200mA
Capacitance @ Vr, F-