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Specification
Collector-Emitter Breakdown Voltage (Vceo)10V
Power Dissipation (Pd)365mW
Collector Current (Ic)100mA
DC Current Gain (hFE@Ic,Vce)100@5mA,6V
Transition Frequency (fT)8GHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)-
Transistor TypeNPN
Operating Temperature+175u2103@(Tj)