Availability:
18621
pieces
Specification
Vgs(th) (Max) @ Id4V @ 44µA
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackagePG-TO263-3-2
SeriesSIPMOS®
Rds On (Max) @ Id, Vgs80 mOhm @ 15A, 10V
Power Dissipation (Max)90W (Tc)
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other NamesSPB21N10INTR
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Lead Free Status / RoHS StatusContains lead / RoHS non-compliant
Input Capacitance (Ciss) (Max) @ Vds865pF @ 25V
Gate Charge (Qg) (Max) @ Vgs38.4nC @ 10V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)10V
Drain to Source Voltage (Vdss)100V
Detailed DescriptionN-Channel 100V 21A (Tc) 90W (Tc) Surface Mount PG-TO263-3-2
Current - Continuous Drain (Id) @ 25°C21A (Tc)
