Availability:
16124
pieces
Specification
Vgs(th) (Max) @ Id2V @ 250µA
Vgs (Max)±16V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageD2PAK
SeriesHEXFET®
Rds On (Max) @ Id, Vgs35 mOhm @ 16A, 10V
Power Dissipation (Max)3.8W (Ta), 68W (Tc)
PackagingTube
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other Names*IRLZ34NS
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Lead Free Status / RoHS StatusContains lead / RoHS non-compliant
Input Capacitance (Ciss) (Max) @ Vds880pF @ 25V
Gate Charge (Qg) (Max) @ Vgs25nC @ 5V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Drain to Source Voltage (Vdss)55V
Detailed DescriptionN-Channel 55V 30A (Tc) 3.8W (Ta), 68W (Tc) Surface Mount D2PAK
Current - Continuous Drain (Id) @ 25°C30A (Tc)
