Availability:
18569
pieces
Specification
Vgs(th) (Max) @ Id4V @ 250µA
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageD-Pak
SeriesHEXFET®
Rds On (Max) @ Id, Vgs295 mOhm @ 6.6A, 10V
Power Dissipation (Max)110W (Tc)
PackagingCut Tape (CT)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Other NamesIRFR6215TRLPBFCT
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds860pF @ 25V
Gate Charge (Qg) (Max) @ Vgs66nC @ 10V
FET TypeP-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)10V
Drain to Source Voltage (Vdss)150V
Detailed DescriptionP-Channel 150V 13A (Tc) 110W (Tc) Surface Mount D-Pak
Current - Continuous Drain (Id) @ 25°C13A (Tc)
