Availability:
17995
pieces
Specification
Vgs(th) (Max) @ Id4V @ 100µA
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageD-Pak
SeriesHEXFET®
Rds On (Max) @ Id, Vgs7.5 mOhm @ 42A, 10V
Power Dissipation (Max)140W (Tc)
PackagingTube
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Other Names*IRFR1010Z
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Lead Free Status / RoHS StatusContains lead / RoHS non-compliant
Input Capacitance (Ciss) (Max) @ Vds2840pF @ 25V
Gate Charge (Qg) (Max) @ Vgs95nC @ 10V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)10V
Drain to Source Voltage (Vdss)55V
Detailed DescriptionN-Channel 55V 42A (Tc) 140W (Tc) Surface Mount D-Pak
Current - Continuous Drain (Id) @ 25°C42A (Tc)
