Availability:
19347
pieces
Specification
Vgs(th) (Max) @ Id4V @ 250µA
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageD2PAK
SeriesHEXFET®
Rds On (Max) @ Id, Vgs175 mOhm @ 7.2A, 10V
Power Dissipation (Max)3.8W (Ta), 45W (Tc)
PackagingTube
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other Names*IRF9Z24NS
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Lead Free Status / RoHS StatusContains lead / RoHS non-compliant
Input Capacitance (Ciss) (Max) @ Vds350pF @ 25V
Gate Charge (Qg) (Max) @ Vgs19nC @ 10V
FET TypeP-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)10V
Drain to Source Voltage (Vdss)55V
Detailed DescriptionP-Channel 55V 12A (Tc) 3.8W (Ta), 45W (Tc) Surface Mount D2PAK
Current - Continuous Drain (Id) @ 25°C12A (Tc)
