Availability:
16077
pieces
Specification
Vgs(th) (Max) @ Id1V @ 250µA
Vgs (Max)±12V
TechnologyMOSFET (Metal Oxide)
Supplier Device Package8-SO
SeriesHEXFET®
Rds On (Max) @ Id, Vgs8.5 mOhm @ 15A, 4.5V
Power Dissipation (Max)2.5W (Ta)
PackagingTube
Package / Case8-SOIC (0.154", 3.90mm Width)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Lead Free Status / RoHS StatusContains lead / RoHS non-compliant
Input Capacitance (Ciss) (Max) @ Vds7300pF @ 16V
Gate Charge (Qg) (Max) @ Vgs75nC @ 5V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)4.5V
Drain to Source Voltage (Vdss)30V
Detailed DescriptionN-Channel 30V 14.5A (Ta) 2.5W (Ta) Surface Mount 8-SO
Current - Continuous Drain (Id) @ 25°C14.5A (Ta)
