Availability:
11842
pieces
Specification
Vgs(th) (Max) @ Id1V @ 250µA
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Supplier Device Package8-SO
SeriesFETKY™
Rds On (Max) @ Id, Vgs35 mOhm @ 4.1A, 10V
Power Dissipation (Max)2W (Ta)
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154", 3.90mm Width)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Lead Free Status / RoHS StatusContains lead / RoHS non-compliant
Input Capacitance (Ciss) (Max) @ Vds510pF @ 25V
Gate Charge (Qg) (Max) @ Vgs27nC @ 10V
FET TypeN-Channel
FET FeatureSchottky Diode (Isolated)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Drain to Source Voltage (Vdss)30V
Detailed DescriptionN-Channel 30V 5.8A (Ta) 2W (Ta) Surface Mount 8-SO
Current - Continuous Drain (Id) @ 25°C5.8A (Ta)
