Availability:
19088
pieces
Specification
Vgs(th) (Max) @ Id1V @ 250µA
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Supplier Device Package8-SO
SeriesHEXFET®
Rds On (Max) @ Id, Vgs20 mOhm @ 5.6A, 10V
Power Dissipation (Max)2.5W (Ta)
PackagingTube
Package / Case8-SOIC (0.154", 3.90mm Width)
Other Names62-0223PBF
62-0223PBF-ND
SP001565470
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds1700pF @ 25V
Gate Charge (Qg) (Max) @ Vgs92nC @ 10V
FET TypeP-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Drain to Source Voltage (Vdss)30V
Detailed DescriptionP-Channel 30V 10A (Ta) 2.5W (Ta) Surface Mount 8-SO
Current - Continuous Drain (Id) @ 25°C10A (Ta)
