Availability:
19717
pieces
Specification
Vgs(th) (Max) @ Id4V @ 250µA
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageD2PAK
SeriesHEXFET®
Rds On (Max) @ Id, Vgs300 mOhm @ 5.4A, 10V
Power Dissipation (Max)82W (Tc)
PackagingTube
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other Names*IRF630NS
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Lead Free Status / RoHS StatusContains lead / RoHS non-compliant
Input Capacitance (Ciss) (Max) @ Vds575pF @ 25V
Gate Charge (Qg) (Max) @ Vgs35nC @ 10V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)10V
Drain to Source Voltage (Vdss)200V
Detailed DescriptionN-Channel 200V 9.3A (Tc) 82W (Tc) Surface Mount D2PAK
Current - Continuous Drain (Id) @ 25°C9.3A (Tc)
