IPD60R950C6
| Part No | IPD60R950C6 |
|---|---|
| Manufacturer | Infineon |
| Description | MOSFET N-CH 600V 4.4A TO252-3 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Spot quantity:
24409
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | Get Quotation! | - |
| 10 | Get Quotation! | - |
| 100 | Get Quotation! | - |
| 1000 | Get Quotation! | - |
| 10000 | Get Quotation! | - |
Specification
Vgs(th) (Max) @ Id3.5V @ 130µA
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackagePG-TO252-3
SeriesCoolMOS™
Rds On (Max) @ Id, Vgs950 mOhm @ 1.5A, 10V
Power Dissipation (Max)37W (Tc)
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Other NamesIPD60R950C6BTMA1
IPD60R950C6INTR
SP000629368
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds280pF @ 100V
Gate Charge (Qg) (Max) @ Vgs13nC @ 10V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)10V
Drain to Source Voltage (Vdss)600V
Detailed DescriptionN-Channel 600V 4.4A (Tc) 37W (Tc) Surface Mount PG-TO252-3
Current - Continuous Drain (Id) @ 25°C4.4A (Tc)
