IPD60R3K3C6ATMA1
RoHS

IPD60R3K3C6ATMA1

IPD60R3K3C6ATMA1

Infineon

MOSFET N-CH 600V 1.7A TO252-3

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IPD60R3K3C6ATMA1

Availability: 17430 pieces
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Specification
RoHSCompliant
MountSurface Mount
Width6.22 mm
Height2.41 mm
Length6.73 mm
Weight3.949996 g
Fall Time60 ns
PackagingTape & Reel
Rise Time10 ns
Rds On Max3.3 Ω
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Case/PackageTO-252-3
Number of Pins3
Lifecycle StatusObsolete (Last Updated: 2 years ago)
Package Quantity2500
Input Capacitance93 pF
Power Dissipation18.1 W
Number of Channels1
Turn-On Delay Time8 ns
On-State Resistance3.3 Ω
Turn-Off Delay Time40 ns
Element ConfigurationSingle
Max Power Dissipation18.1 W
Max Dual Supply Voltage600 V
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance3.3 Ω
Gate to Source Voltage (Vgs)30 V
Continuous Drain Current (ID)1.7 A
Drain to Source Voltage (Vdss)600 V