IPB036N12N3GATMA1
| Part No | IPB036N12N3GATMA1 |
|---|---|
| Manufacturer | Infineon |
| Description | MOSFET N-CH 120V 180A TO263-7 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Spot quantity:
16344
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 7.2688 | |
| 10 | 7.1234 | |
| 100 | 6.9054 | |
| 1000 | 6.6873 | |
| 10000 | 6.3965 |
Specification
RoHSCompliant
MountSurface Mount
Height4.5 mm
Fall Time21 ns
Lead FreeContains Lead
PackagingTape & Reel
Rise Time52 ns
Case/PackageTO-263
Halogen FreeHalogen Free
Number of Pins7
Lifecycle StatusProduction (Last Updated: 2 years ago)
Package Quantity1000
Input Capacitance10.4 nF
Power Dissipation300 W
Threshold Voltage3 V
Number of Channels1
Number of Elements1
Turn-On Delay Time35 ns
On-State Resistance3.6 mΩ
Turn-Off Delay Time76 ns
Max Dual Supply Voltage120 V
Max Operating Temperature175 °C
Min Operating Temperature-55 °C
Drain to Source Resistance2.9 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)180 A
Max Junction Temperature (Tj)175 °C
Drain to Source Voltage (Vdss)120 V
Drain to Source Breakdown Voltage120 V
