IXTY1R6N50D2
| Part No | IXTY1R6N50D2 |
|---|---|
| Manufacturer | IXYS |
| Description | MOSFET N-CH 500V 1.6A TO252 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Spot quantity:
12719
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 3.5754 | |
| 10 | 3.5039 | |
| 100 | 3.3966 | |
| 1000 | 3.2894 | |
| 10000 | 3.1464 |
Specification
PackageTube
SeriesDepletion
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)500 V
Current-ContinuousDrain(Id)@25°C1.6A (Tc)
DriveVoltage(MaxRdsOn-
MinRdsOn)2.3Ohm @ 800mA, 0V
RdsOn(Max)@Id-
Vgs23.7 nC @ 5 V
Vgs(th)(Max)@Id±20V
Vgs(Max)645 pF @ 25 V
InputCapacitance(Ciss)(Max)@VdsDepletion Mode
FETFeature100W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeTO-252AA
SupplierDevicePackageTO-252-3, DPak (2 Leads + Tab), SC-63
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
