IXTU01N100D
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IXTU01N100D

IXTU01N100D

IXYS

MOSFET N-CH 1000V 400MA TO251

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IXTU01N100D

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Specification
PackageTube
SeriesDepletion
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)1000 V
Current-ContinuousDrain(Id)@25°C400mA (Tc)
DriveVoltage(MaxRdsOn0V
MinRdsOn)80Ohm @ 50mA, 0V
RdsOn(Max)@Id4.5V @ 25µA
Vgs5.8 nC @ 5 V
Vgs(th)(Max)@Id±20V
Vgs(Max)100 pF @ 25 V
InputCapacitance(Ciss)(Max)@VdsDepletion Mode
FETFeature1.1W (Ta), 25W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-251AA
SupplierDevicePackageTO-251-3 Short Leads, IPak, TO-251AA
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification