IXTP02N50D
RoHS

IXTP02N50D

IXTP02N50D

IXYS

MOSFET N-CH 500V 200MA TO220AB

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IXTP02N50D

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Specification
PackageTube
SeriesDepletion
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)500 V
Current-ContinuousDrain(Id)@25°C200mA (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)30Ohm @ 50mA, 0V
RdsOn(Max)@Id5V @ 25µA
Vgs-
Vgs(th)(Max)@Id±20V
Vgs(Max)120 pF @ 25 V
InputCapacitance(Ciss)(Max)@VdsDepletion Mode
FETFeature1.1W (Ta), 25W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220-3
SupplierDevicePackageTO-220-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification