IXTN21N100
RoHS

IXTN21N100

IXTN21N100

IXYS

MOSFET N-CH 1000V 21A SOT227B

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IXTN21N100

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Specification
PackageTube
SeriesMegaMOS™
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)1000 V
Current-ContinuousDrain(Id)@25°C21A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)550mOhm @ 500mA, 10V
RdsOn(Max)@Id4.5V @ 500µA
Vgs250 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)8400 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature520W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureChassis Mount
MountingTypeSOT-227B
SupplierDevicePackageSOT-227-4, miniBLOC
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification