IXTA1R4N120P
RoHS

IXTA1R4N120P

IXTA1R4N120P

IXYS

MOSFET N-CH 1200V 1.4A TO263

Download Datasheet

IXTA1R4N120P

Availability: 13479 pieces
Request Quotation
Specification
PackageTube
SeriesPolar
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C1.4A (Tc)
DriveVoltage(MaxRdsOn13Ohm @ 500mA, 10V
MinRdsOn)4.5V @ 100µA
RdsOn(Max)@Id24.8 nC @ 10 V
Vgs±20V
Vgs(th)(Max)@Id666 pF @ 25 V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds86W (Tc)
FETFeature-55°C ~ 150°C (TJ)
PowerDissipation(Max)Surface Mount
OperatingTemperatureTO-263AA
MountingTypeTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SupplierDevicePackage10V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification