IXFP10N60P
RoHS

IXFP10N60P

IXFP10N60P

IXYS

MOSFET N-CH 600V 10A TO220AB

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IXFP10N60P

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Specification
PackageTube
SeriesHiPerFET™, Polar
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)600 V
Current-ContinuousDrain(Id)@25°C10A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)740mOhm @ 5A, 10V
RdsOn(Max)@Id5.5V @ 1mA
Vgs32 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)1610 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature200W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220-3
SupplierDevicePackageTO-220-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification