IXFA4N100Q
RoHS

IXFA4N100Q

IXFA4N100Q

IXYS

MOSFET N-CH 1000V 4A TO263

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IXFA4N100Q

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Specification
PackageTube
SeriesHiPerFET™, Q Class
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)1000 V
Current-ContinuousDrain(Id)@25°C4A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)3Ohm @ 2A, 10V
RdsOn(Max)@Id4.5V @ 1.5mA
Vgs39 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)1050 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature150W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeTO-263AA (IXFA)
SupplierDevicePackageTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification