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Specification
Collector-Emitter Breakdown Voltage (Vceo)40V
Power Dissipation (Pd)400mW
Collector Current (Ic)500mA
DC Current Gain (hFE@Ic,Vce)50@500mA,2V
Transition Frequency (fT)300MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)250mV@500mA,50mA
Transistor TypeNPN
Operating Temperature-55u2103~+150u2103@(Tj)