
Availability:
10350
pieces
Specification
Collector-Emitter Breakdown Voltage (Vceo)65V
Power Dissipation (Pd)200mW
Collector Current (Ic)100mA
DC Current Gain (hFE@Ic,Vce)290@2mA,5V
Transition Frequency (fT)100MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)250mV@100mA,5mA
Transistor TypePNP
Operating Temperature-65u2103~+150u2103@(Tj)