SQ4431EY-T1_GE3

Part:

SQ4431EY-T1_GE3

Manufacturer:

Vishay

Description:

MOSFET P-CH 30V 10.8A 8SOIC

Datasheet:

Download Datasheet

ECAD Module:

Availability: 15603 pieces

Quantity Unit Price Ext. Price

1+ 0.9504 0.95 $

10+ 0.9314 9.31 $

100+ 0.9029 90.29 $

1000+ 0.8744 874.40 $

10000+ 0.8364 8364.00 $

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Specification

Vgs(th) (Max) @ Id2.5V @ 250µA

Vgs (Max)±20V

TechnologyMOSFET (Metal Oxide)

Supplier Device Package8-SO

SeriesAutomotive, AEC-Q101, TrenchFET®

Rds On (Max) @ Id, Vgs30 mOhm @ 6A, 10V

Power Dissipation (Max)6W (Tc)

PackagingTape & Reel (TR)

Package / Case8-SOIC (0.154", 3.90mm Width)

Other NamesSQ4431EY-T1-GE3 SQ4431EY-T1-GE3-ND SQ4431EY-T1_GE3-ND SQ4431EY-T1_GE3TR

Operating Temperature-55°C ~ 175°C (TJ)

Mounting TypeSurface Mount

Moisture Sensitivity Level (MSL)1 (Unlimited)

Lead Free Status / RoHS StatusLead free / RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds1265pF @ 15V

Gate Charge (Qg) (Max) @ Vgs25nC @ 10V

FET TypeP-Channel

FET Feature-

Drive Voltage (Max Rds On, Min Rds On)10V

Drain to Source Voltage (Vdss)30V

Detailed DescriptionP-Channel 30V 10.8A (Tc) 6W (Tc) Surface Mount 8-SO

Current - Continuous Drain (Id) @ 25°C10.8A (Tc)