SIS862DN-T1-GE3
RoHS

SIS862DN-T1-GE3

SIS862DN-T1-GE3

Vishay

MOSFET N-CH 60V 40A 1212

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SIS862DN-T1-GE3

Availability: 16149 pieces
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Specification
RoHSCompliant
MountSurface Mount
Height1.12 mm
Fall Time5 ns
Lead FreeLead Free
Rise Time5 ns
REACH SVHCUnknown
Rds On Max8.5 mΩ
Schedule B8541290080
Number of Pins8
Input Capacitance1.32 nF
Power Dissipation52 W
Threshold Voltage2.6 V
Number of Channels1
Turn-On Delay Time12 ns
Radiation HardeningNo
Turn-Off Delay Time15 ns
Element ConfigurationSingle
Max Power Dissipation52 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance7 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)40 A
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)60 V
Drain to Source Breakdown Voltage60 V