SIA433EDJ-T1-GE3
RoHS

SIA433EDJ-T1-GE3

SIA433EDJ-T1-GE3

Vishay

MOSFET P-CH 20V 12A SC-70-6

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SIA433EDJ-T1-GE3

Availability: 15424 pieces
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Specification
RoHSCompliant
MountSurface Mount
Width2.05 mm
Height750 µm
Length2.05 mm
Fall Time3.2 µs
Lead FreeLead Free
Rise Time1.7 µs
REACH SVHCUnknown
Rds On Max18 mΩ
Resistance15 mΩ
Schedule B8541290080
Number of Pins6
Power Dissipation3.5 W
Threshold Voltage-500 mV
Number of Channels1
Number of Elements1
Turn-On Delay Time710 ns
Radiation HardeningNo
Turn-Off Delay Time6 µs
Element ConfigurationSingle
Max Power Dissipation19 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance18 mΩ
Gate to Source Voltage (Vgs)12 V
Continuous Drain Current (ID)-12 A
Drain to Source Voltage (Vdss)20 V
Drain to Source Breakdown Voltage-20 V