SI7858ADP-T1-E3
RoHS

SI7858ADP-T1-E3

SI7858ADP-T1-E3

Vishay

MOSFET N-CH 12V 20A PPAK SO-8

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SI7858ADP-T1-E3

Availability: 20279 pieces
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Specification
RoHSCompliant
MountSurface Mount
Width5.89 mm
Height1.04 mm
Length4.9 mm
Weight506.605978 mg
Fall Time70 ns
Lead FreeLead Free
Rise Time40 ns
Rds On Max2.6 mΩ
Resistance2.6 mΩ
Schedule B8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080
Number of Pins8
Input Capacitance5.7 nF
Power Dissipation1.9 W
Number of Channels1
Number of Elements1
Turn-On Delay Time40 ns
Radiation HardeningNo
Turn-Off Delay Time140 ns
Element ConfigurationSingle
Max Power Dissipation1.9 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance2.6 mΩ
Gate to Source Voltage (Vgs)8 V
Continuous Drain Current (ID)20 A
Drain to Source Voltage (Vdss)12 V
Drain to Source Breakdown Voltage12 V