SI7852DP-T1-E3
| Part No | SI7852DP-T1-E3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET N-CH 80V 7.6A PPAK SO-8 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Spot quantity:
20251
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.6269 | |
| 10 | 2.5744 | |
| 100 | 2.4956 | |
| 1000 | 2.4167 | |
| 10000 | 2.3117 |
Specification
RoHSCompliant
MountSurface Mount
Width5.89 mm
Height1.04 mm
Length4.9 mm
Weight506.605978 mg
Fall Time11 ns
Lead FreeLead Free
PackagingDigi-Reel®
Rise Time11 ns
REACH SVHCNo SVHC
Rds On Max16.5 mΩ
Resistance16.5 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Nominal Vgs2 V
Case/PackageSOIC
Number of Pins8
Contact PlatingTin
Power Dissipation1.9 W
Threshold Voltage2 V
Number of Channels1
Number of Elements1
Turn-On Delay Time17 ns
Radiation HardeningNo
Turn-Off Delay Time40 ns
Element ConfigurationSingle
Max Power Dissipation1.9 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance13.5 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)7.6 A
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)80 V
Drain to Source Breakdown Voltage80 V
