SI7726DN-T1-GE3
| Part No | SI7726DN-T1-GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET N-CH 30V 35A 1212-8 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Spot quantity:
23138
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.306 | |
| 10 | 0.2999 | |
| 100 | 0.2907 | |
| 1000 | 0.2815 | |
| 10000 | 0.2693 |
Specification
RoHSCompliant
MountSurface Mount
Width3.05 mm
Height1.04 mm
Length3.05 mm
Fall Time14 ns
Rise Time10 ns
Rds On Max9.5 mΩ
Nominal Vgs2.6 V
Number of Pins8
Input Capacitance1.765 nF
Power Dissipation3.8 W
Number of Channels1
Number of Elements1
Turn-On Delay Time23 ns
Radiation HardeningNo
Turn-Off Delay Time27 ns
Max Power Dissipation3.8 W
Max Operating Temperature150 °C
Min Operating Temperature-50 °C
Drain to Source Resistance9.5 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)14.9 A
Drain to Source Voltage (Vdss)30 V
