SI7686DP-T1-GE3
RoHS

SI7686DP-T1-GE3

SI7686DP-T1-GE3

Vishay

MOSFET N-CH 30V 35A PPAK SO-8

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SI7686DP-T1-GE3

Availability: 22957 pieces
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Specification
RoHSCompliant
MountSurface Mount
Width5.89 mm
Height1.04 mm
Length4.9 mm
Weight506.605978 mg
Fall Time8 ns
Rise Time16 ns
REACH SVHCUnknown
Rds On Max9.5 mΩ
Case/PackageSOIC
Number of Pins8
Input Capacitance1.22 nF
Power Dissipation5 W
Threshold Voltage3 V
Number of Channels1
Number of Elements1
Turn-On Delay Time13 ns
Radiation HardeningNo
Turn-Off Delay Time23 ns
Element ConfigurationSingle
Max Power Dissipation5 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance9.5 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)17.9 A
Drain to Source Voltage (Vdss)30 V
Drain to Source Breakdown Voltage30 V