SI7463DP-T1-GE3
RoHS

SI7463DP-T1-GE3

SI7463DP-T1-GE3

Vishay

MOSFET P-CH 40V 11A PPAK SO-8

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SI7463DP-T1-GE3

Availability: 18564 pieces
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Specification
RoHSCompliant
MountSurface Mount
Width5.89 mm
Height1.04 mm
Length4.9 mm
Weight506.605978 mg
Fall Time25 ns
Lead FreeLead Free
Rise Time25 ns
REACH SVHCNo SVHC
Rds On Max9.2 mΩ
Resistance9.2 MΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Nominal Vgs-3 V
Case/PackageSOIC
Number of Pins8
Power Dissipation1.9 W
Threshold Voltage-3 V
Number of Channels1
Number of Elements1
Turn-On Delay Time20 ns
Radiation HardeningNo
Turn-Off Delay Time200 ns
Element ConfigurationSingle
Max Power Dissipation1.9 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance7.5 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)-18.6 A
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)-40 V
Manufacturer Package IdentifierS17-0173-Single
Drain to Source Breakdown Voltage-40 V