SI7454DDP-T1-GE3
RoHS

SI7454DDP-T1-GE3

SI7454DDP-T1-GE3

Vishay

MOSFET N-CH 100V 21A PPAK SO-8

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SI7454DDP-T1-GE3

Availability: 15071 pieces
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Specification
RoHSCompliant
MountSurface Mount
Width5.26 mm
Height1.12 mm
Length6.25 mm
Fall Time9 ns
Lead FreeLead Free
Rise Time13 ns
REACH SVHCUnknown
Rds On Max33 mΩ
Resistance33 MΩ
Schedule B8541290080
Case/PackageSO
Number of Pins8
Input Capacitance550 pF
Power Dissipation4.1 W
Threshold Voltage1.5 V
Number of Channels1
Number of Elements1
Turn-On Delay Time10 ns
Radiation HardeningNo
Turn-Off Delay Time16 ns
Element ConfigurationSingle
Max Power Dissipation29.7 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance33 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)21 A
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)100 V
Drain to Source Breakdown Voltage100 V