SI7430DP-T1-E3
| Part No | SI7430DP-T1-E3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET N-CH 150V 26A PPAK SO-8 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Spot quantity:
15721
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 3.2946 | |
| 10 | 3.2287 | |
| 100 | 3.1299 | |
| 1000 | 3.031 | |
| 10000 | 2.8992 |
Specification
RoHSCompliant
MountSurface Mount
Width5.89 mm
Height1.04 mm
Length4.9 mm
Weight506.605978 mg
Fall Time7 ns
Lead FreeLead Free
Rise Time12 ns
REACH SVHCUnknown
Rds On Max45 mΩ
Resistance45 mΩ
Case/PackageSOIC
Number of Pins8
Contact PlatingTin
Input Capacitance1.735 nF
Power Dissipation5.2 W
Threshold Voltage2.5 V
Number of Channels1
Number of Elements1
Turn-On Delay Time16 ns
Radiation HardeningNo
Turn-Off Delay Time20 ns
Element ConfigurationSingle
Max Power Dissipation5.2 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance45 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)26 A
Drain to Source Voltage (Vdss)150 V
Drain to Source Breakdown Voltage150 V
