SI7119DN-T1-E3
| Part No | SI7119DN-T1-E3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET P-CH 200V 3.8A 1212-8 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Spot quantity:
18101
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.9797 | |
| 10 | 0.9601 | |
| 100 | 0.9307 | |
| 1000 | 0.9013 | |
| 10000 | 0.8621 |
Specification
RoHSCompliant
MountSurface Mount
Width3.05 mm
Height1.04 mm
Length3.05 mm
Fall Time12 ns
Lead FreeLead Free
Rise Time11 ns
Rds On Max1.05 Ω
Resistance1.05 Ω
Schedule B8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080
Number of Pins8
Input Capacitance666 pF
Power Dissipation3.7 W
Number of Channels1
Number of Elements1
Turn-On Delay Time9 ns
Radiation HardeningNo
Turn-Off Delay Time27 ns
Element ConfigurationSingle
Max Power Dissipation52 W
Max Operating Temperature150 °C
Min Operating Temperature-50 °C
Drain to Source Resistance1.05 Ω
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)1.2 A
Drain to Source Voltage (Vdss)200 V
Drain to Source Breakdown Voltage-200 V
