SI7112DN-T1-GE3
RoHS

SI7112DN-T1-GE3

SI7112DN-T1-GE3

Vishay

MOSFET N-CH 30V 11.3A 1212-8

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SI7112DN-T1-GE3

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Specification
RoHSCompliant
MountSurface Mount
Width3.05 mm
Height1.04 mm
Length3.05 mm
Fall Time10 ns
Rise Time10 ns
REACH SVHCUnknown
Rds On Max7.5 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Number of Pins8
Input Capacitance2.61 nF
Power Dissipation1.5 W
Threshold Voltage600 mV
Number of Channels1
Number of Elements1
Turn-On Delay Time10 ns
Radiation HardeningNo
Turn-Off Delay Time65 ns
Element ConfigurationSingle
Max Power Dissipation1.5 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance7.5 mΩ
Gate to Source Voltage (Vgs)12 V
Continuous Drain Current (ID)11.3 A
Drain to Source Voltage (Vdss)30 V