SI7112DN-T1-GE3
| Part No | SI7112DN-T1-GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET N-CH 30V 11.3A 1212-8 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Spot quantity:
18297
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.7136 | |
| 10 | 1.6793 | |
| 100 | 1.6279 | |
| 1000 | 1.5765 | |
| 10000 | 1.508 |
Specification
RoHSCompliant
MountSurface Mount
Width3.05 mm
Height1.04 mm
Length3.05 mm
Fall Time10 ns
Rise Time10 ns
REACH SVHCUnknown
Rds On Max7.5 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Number of Pins8
Input Capacitance2.61 nF
Power Dissipation1.5 W
Threshold Voltage600 mV
Number of Channels1
Number of Elements1
Turn-On Delay Time10 ns
Radiation HardeningNo
Turn-Off Delay Time65 ns
Element ConfigurationSingle
Max Power Dissipation1.5 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance7.5 mΩ
Gate to Source Voltage (Vgs)12 V
Continuous Drain Current (ID)11.3 A
Drain to Source Voltage (Vdss)30 V
