SI5855DC-T1-E3
| Part No | SI5855DC-T1-E3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET P-CH 20V 2.7A 1206-8 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Spot quantity:
19207
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | Get Quotation! | - |
| 10 | Get Quotation! | - |
| 100 | Get Quotation! | - |
| 1000 | Get Quotation! | - |
| 10000 | Get Quotation! | - |
Specification
RoHSCompliant
MountSurface Mount
Fall Time30 ns
Lead FreeLead Free
Rise Time30 ns
REACH SVHCUnknown
Rds On Max110 mΩ
Resistance110 mΩ
Nominal Vgs-450 mV
Case/PackageSMD/SMT
Number of Pins8
Power Dissipation1.1 W
Number of Elements1
Turn-On Delay Time16 ns
Radiation HardeningNo
Turn-Off Delay Time30 ns
Max Power Dissipation1.1 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance110 mΩ
Gate to Source Voltage (Vgs)8 V
Continuous Drain Current (ID)2.7 A
Drain to Source Voltage (Vdss)20 V
Drain to Source Breakdown Voltage20 V
