SI5432DC-T1-GE3
RoHS

SI5432DC-T1-GE3

SI5432DC-T1-GE3

Vishay

MOSFET N-CH 20V 6A 1206-8

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SI5432DC-T1-GE3

Availability: 16340 pieces
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Specification
RoHSCompliant
MountSurface Mount
Width1.65 mm
Height1.1 mm
Length3.05 mm
Weight84.99187 mg
Fall Time12 ns
Lead FreeLead Free
Rise Time10 ns
REACH SVHCUnknown
Rds On Max20 mΩ
Resistance20 MΩ
Case/PackageSMD/SMT
Number of Pins8
Input Capacitance1.2 nF
Power Dissipation2.5 W
Threshold Voltage1.5 V
Number of Channels1
Number of Elements1
Turn-On Delay Time15 ns
Radiation HardeningNo
Turn-Off Delay Time35 ns
Max Power Dissipation2.5 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance20 mΩ
Gate to Source Voltage (Vgs)12 V
Continuous Drain Current (ID)6 A
Drain to Source Voltage (Vdss)20 V
Drain to Source Breakdown Voltage20 V