SI4825DY-T1-E3
RoHS

SI4825DY-T1-E3

SI4825DY-T1-E3

Vishay

MOSFET P-CH 30V 8.1A 8-SOIC

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SI4825DY-T1-E3

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Specification
RoHSCompliant
MountSurface Mount
Width4 mm
Height1.55 mm
Length5 mm
Weight506.605978 mg
Fall Time13 ns
Lead FreeLead Free
Rise Time13 ns
REACH SVHCUnknown
Rds On Max14 mΩ
Resistance14 mΩ
Nominal Vgs-3 V
Case/PackageSOIC
Number of Pins8
Power Dissipation1.5 W
Number of Channels1
Number of Elements1
Turn-On Delay Time15 ns
Radiation HardeningNo
Turn-Off Delay Time97 ns
Element ConfigurationSingle
Max Power Dissipation1.5 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance14 mΩ
Gate to Source Voltage (Vgs)25 V
Continuous Drain Current (ID)8.1 A
Drain to Source Voltage (Vdss)30 V
Drain to Source Breakdown Voltage-30 V