SI4686DY-T1-GE3
| Part No | SI4686DY-T1-GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET N-CH 30V 18.2A 8-SOIC |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Spot quantity:
23163
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.5 | |
| 10 | 1.47 | |
| 100 | 1.425 | |
| 1000 | 1.38 | |
| 10000 | 1.32 |
Specification
RoHSCompliant
MountSurface Mount
Width4 mm
Height1.55 mm
Length5 mm
Weight186.993455 mg
Fall Time8 ns
Rise Time20 ns
Rds On Max9.5 mΩ
Nominal Vgs3 V
Case/PackageSO
Number of Pins8
Contact PlatingTin
Input Capacitance1.22 nF
Power Dissipation3 W
Number of Channels1
Number of Elements1
Turn-On Delay Time20 ns
Radiation HardeningNo
Turn-Off Delay Time20 ns
Element ConfigurationSingle
Max Power Dissipation3 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance9.5 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)13.8 A
Drain to Source Voltage (Vdss)30 V
