SI4435DDY-T1-E3
RoHS

SI4435DDY-T1-E3

SI4435DDY-T1-E3

Vishay

MOSFET P-CH 30V 11.4A 8SOIC

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SI4435DDY-T1-E3

Availability: 19002 pieces
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Specification
RoHSCompliant
MountSurface Mount
Width4 mm
Height1.5 mm
Length5 mm
Weight186.993455 mg
Fall Time16 ns
Lead FreeLead Free
Rise Time35 ns
REACH SVHCNo SVHC
Rds On Max800 mΩ
Resistance24 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Case/PackageSOIC
Number of Pins8
Contact PlatingTin
Input Capacitance260 pF
Power Dissipation2.5 W
Threshold Voltage-3 V
Number of Channels1
Number of Elements1
Turn-On Delay Time42 ns
Radiation HardeningNo
Turn-Off Delay Time40 ns
Element ConfigurationSingle
Max Power Dissipation2.5 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance24 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)8.1 A
Drain to Source Voltage (Vdss)200 V
Drain to Source Breakdown Voltage-30 V