SI4435BDY-T1-E3
RoHS

SI4435BDY-T1-E3

SI4435BDY-T1-E3

Vishay

MOSFET P-CH 30V 7A 8-SOIC

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SI4435BDY-T1-E3

Availability: 41595 pieces
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Specification
RoHSCompliant
MountSurface Mount
Width4 mm
Height1.55 mm
Length5 mm
Weight186.993455 mg
Fall Time15 ns
Lead FreeLead Free
Rise Time15 ns
Rds On Max20 mΩ
Case/PackageSO
Number of Pins8
Power Dissipation1.5 W
Number of Channels1
Number of Elements1
Turn-On Delay Time10 ns
Turn-Off Delay Time110 ns
Element ConfigurationSingle
Max Power Dissipation1.5 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance20 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)7 A
Drain to Source Voltage (Vdss)30 V
Drain to Source Breakdown Voltage-30 V