SI3459BDV-T1-GE3
RoHS

SI3459BDV-T1-GE3

SI3459BDV-T1-GE3

Vishay

MOSFET P-CH 60V 2.9A 6-TSOP

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SI3459BDV-T1-GE3

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Specification
RoHSCompliant
MountSurface Mount
Width1.65 mm
Height1 mm
Length3.05 mm
Weight19.986414 mg
Fall Time10 ns
Lead FreeLead Free
Rise Time12 ns
REACH SVHCUnknown
Rds On Max216 mΩ
Resistance216 MΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Nominal Vgs-3 V
Case/PackageTSOP
Number of Pins6
Input Capacitance350 pF
Power Dissipation2 W
Threshold Voltage-3 V
Number of Channels1
Number of Elements1
Turn-On Delay Time5 ns
Radiation HardeningNo
Turn-Off Delay Time16 ns
Element ConfigurationSingle
Max Power Dissipation3.3 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance180 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)-2.9 A
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)-60 V
Drain to Source Breakdown Voltage-60 V