SI3456DDV-T1-GE3
| Part No | SI3456DDV-T1-GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET N-CH 30V 6.3A 6-TSOP |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Spot quantity:
26939
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.4879 | |
| 10 | 0.4781 | |
| 100 | 0.4635 | |
| 1000 | 0.4489 | |
| 10000 | 0.4294 |
Specification
RoHSCompliant
MountSurface Mount
Weight19.986414 mg
Fall Time13 ns
Lead FreeLead Free
PackagingCut Tape
Rise Time13 ns
REACH SVHCNo SVHC
Rds On Max40 mΩ
Resistance40 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Case/PackageTSOP
Number of Pins6
Input Capacitance325 pF
Power Dissipation1.7 W
Threshold Voltage1.2 V
Number of Channels1
Number of Elements1
Turn-On Delay Time12 ns
Radiation HardeningNo
Turn-Off Delay Time16 ns
Element ConfigurationSingle
Max Power Dissipation1.7 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance40 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)5 A
Drain to Source Voltage (Vdss)30 V
Drain to Source Breakdown Voltage30 V
